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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D091
BLF368 VHF push-pull power MOS transistor
Product specification Supersedes data of September 1992 1998 Jul 29
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
FEATURES * High power gain * Easy power control * Good thermal stability * Gold metallization ensures excellent reliability. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262A1 balanced flange package, with two ceramic caps. The mounting flange provides the common source connection for the transistors. PINNING - SOT262A1 PIN 1 2 3 4 5 DESCRIPTION drain 1 drain 2 gate 1 gate 2 source
ndbook, halfpage
BLF368
PIN CONFIGURATION
1
2
d2 g2 g1 s d1
MBB157
5 3
Top view
5 4
MSB008
Fig.1 Simplified outline and symbol.
CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Th = 25 C in a push-pull common source test circuit. MODE OF OPERATION CW, class-AB f (MHz) 225 VDS (V) 32 PL (W) 300 Gp (dB) >12 typ. 13.5 Note 1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% synchronized input/25% synchronized output compression in television service (negative modulation, CCIR system). Gp (dB) (note 1) >1 typ. 0.4 D (%) >55 typ. 62
1998 Jul 29
2
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS - - - -65 - MIN.
BLF368
MAX.
UNIT
Per transistor section unless otherwise specified VDSS VGSS ID Ptot Tstg Tj drain-source voltage gate-source voltage drain current (DC) storage temperature junction temperature 65 20 25 500 150 200 V V A W C C
total power dissipation Tmb 25 C total device; both sections equally loaded -
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER CONDITIONS VALUE 0.35 0.15 UNIT K/W K/W
thermal resistance from junction to mounting base total device; both sections equally loaded thermal resistance from mounting base to heatsink total device; both sections equally loaded
102 handbook, halfpage ID (A)
(1) (2)
MRA933
handbook, halfpage
500
MGE616
Ptot (W)
400 (2) (1) 300
10 200
100
1 1 10 VDS (V) 102
0
0
40
80
120 Th (C)
160
(1) Current in this area may be limited by RDSon. (2) Tmb = 25 C. Total device; both sections equally loaded.
(1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
1998 Jul 29
3
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. - - - - - 7.5 - 0.1 37 495 340 40 5.4
BLF368
MAX. - 5 1 4.5 100 - 1.1 0.15 - - - - -
UNIT
Per transistor section V(BR)DSS IDSS IGSS VGSth VGS gfs gfs1/gfs2 RDSon IDSX Cis Cos Crs Cd-f drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of both transistor sections forward transconductance forward transconductance ratio of both transistor sections drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance drain-flange capacitance VGS = 0; ID = 100 mA VGS = 0; VDS = 32 V VGS = 20 V; VDS = 0 ID = 100 mA; VDS = 10 V ID = 100 mA; VDS = 10 V ID = 8 A; VDS = 10 V ID = 8 A; VDS = 10 V ID = 8 A; VDS = 10 V VGS = 10 V; VDS = 10 V VGS = 0; VDS = 32 V; f = 1 MHz VGS = 0; VDS = 32 V; f = 1 MHz VGS = 0; VDS = 32 V; f = 1 MHz 65 - - 2 - 5 0.9 - - - - - - V mA A V mV S
A pF pF pF pF
handbook, halfpage
0
MGP229
MGP230
handbook, halfpage
60
T.C. (mV/K) -1
ID (A) 40
-2
-3 20 -4
-5 10-1
1
ID (A)
10
0 0 5 10 15 VGS (V) 20
VDS = 10 V.
VDS = 10 V; Tj = 25 C.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current; typical values per section.
Fig.5
Drain current as a function of gate-source voltage; typical values per section.
1998 Jul 29
4
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
MGP231
MGP234
handbook, halfpage
200
handbook, halfpage
1500
RDSon (m) 150
C (pF) 1000
100
500
Cis Cos
50 0 50 100 Tj (C) 150
0 0 10 20 30 VDS (V) 40
VGS = 10 V; ID = 8 A.
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature; typical values per section.
Fig.7
Input and output capacitance as functions of drain-source voltage; typical values per section.
MGP232
handbook, halfpage
600
Crs (pF) 400
200
0 0 10 20 30 VDS (V) 40
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage; typical values per section.
1998 Jul 29
5
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
APPLICATION INFORMATION FOR CLASS-AB OPERATION Th = 25 C; Rth mb-h = 0.15 K/W unless otherwise specified. RF performance in CW operation in a common source class-AB circuit. RGS = 536 per section; optimum load impedance per section = 1.34 + j0.34 ; VDS = 32 V. MODE OF OPERATION CW, class-AB f (MHz) 225 225 225 175 Note 1. Assuming a 3rd order amplitude transfer characteristic, 1 dB compression corresponds with 30% synchronized input/25% synchronized output compression in television service (negative modulation, CCIR system). Ruggedness in class-AB operation The BLF368 is capable of withstanding a load mismatch corresponding to VSWR = 10 through all phases under the following conditions: VDS = 32 V; f = 225 MHz at rated output power. VDS (V) 32 28 35 28 IDQ (mA) 2 x 250 2 x 250 2 x 250 2 x 250 PL (W) 300 300 300 300 Gp (dB) >12 typ. 13.5 typ. 13 typ. 14 typ. 15 Gp (dB) (note 1) >1 typ. 0.4 typ. 0.7 typ. 0.2 typ. 0.5 D (%) >55 typ. 62 typ. 68 typ. 60 typ. 70
1998 Jul 29
6
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
handbook, halfpage
20
MGP239
handbook, halfpage
80
MGP241
Gp (dB) 16
D (%) 60
12
40
8
20
4 0 100 200 300 400 500 PL (W)
0 0 100 200 300 400 500 PL (W)
Class-AB operation; VDS = 32 V; IDQ = 2 x 250 mA; ZL = 1.34 + j0.34 (per section); RGS = 536 (per section); f = 225 MHz. solid line: Th = 25 C. dotted line: Th = 70 C.
Class-AB operation; VDS = 32 V; IDQ = 2 x 250 mA; ZL = 1.34 + j0.34 (per section); RGS = 536 (per section); f = 225 MHz. solid line: Th = 25 C. dotted line: Th = 70 C.
Fig.9
Power gain as a function of load power; typical values per section.
Fig.10 Efficiency as a function of load power; typical values per section.
handbook, halfpage
500
MGP240
PL (W)
400
300
200
100
0 0 10 20 PIN (W) 30
Class-AB operation; VDS = 32 V; IDQ = 2 x 250 mA; ZL = 1.34 + j0.34 (per section); RGS = 536 (per section); f = 225 MHz. solid line: Th = 25 C. dotted line: Th = 70 C.
Fig.11 Load power as a function of input power; typical values per section.
1998 Jul 29
7
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ndbook, full pagewidth
1998 Jul 29
A C6 L1 C1 L4 L6 50 input L2 C2 L3 L5 L7 C3 C4
Philips Semiconductors
VHF push-pull power MOS transistor
VDD1 C16 C12 C17
R1
C8
R2 C9 C13
R7
L12 C18
R3 D.U.T. L8
L13 C25 L10 L16 L18 L20 C29 L22
C5
C22
C23
C24
C27
C28
L23
50 output
8
IC1 VDD1 R9 C34 f = 225 MHz.
C30 L9 L11 R4 L17 C26 L14 C14 C19 L19 L21 L24
C7 C10
R5 A R8 C11 C20 C33 C15 L15
Product specification
R6 C32 C31
C21 VDD2
MGP211
BLF368
Fig.12 Test circuit for class-AB operation.
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
List of components class-AB test circuit (see Figs 12 and 13) COMPONENT C1, C2 DESCRIPTION multilayer ceramic chip capacitor (note 1) film dielectric trimmer multilayer ceramic chip capacitor (note 1) film dielectric trimmer VALUE 2 x 56 pF in parallel + 18 pF, 500 V 2 to 9 pF 47 pF, 500 V 5 to 60 pF 1 nF, 500 V 100 nF, 50 V 10 F, 63 V 82 pF, 500 V 10 pF + 30 pF in parallel, 500 V 2 to 18 pF 39 pF + 47 pF in parallel, 500 V 18 pF, 500 V 3 x 100 pF in parallel, 500 V 50 50 4.8 x 80 mm ext. conductor length 80 mm ext. dia 3.6 mm 6 x 32.5 mm 6 x 10.5 mm 6 x 3 mm 6 x 10.5 mm DIMENSIONS
BLF368
CATALOGUE No.
C3 C4 C5
2222 809 09005
2222 809 08003 2222 852 47104
C6, C7, C9, C10, multilayer ceramic chip capacitor C12, C15, C31, C34 (note 1) C8, C11, C16, C21, C32 C17, C20, C33 C22 C23 C24, C28 C25, C26 C27 C29, C30 L1, L3, L22, L24 L2, L23 multilayer ceramic chip capacitor (note 1) electrolytic capacitor multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) film dielectric trimmer multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) stripline (note 2) semi-rigid cable (note 3)
2222 809 09006
L4, L5 L6, L7 L8, L9 L10, L11 L12, L15 L13, L14
stripline (note 2) stripline (note 2) stripline (note 2) stripline (note 2) grade 3B Ferroxcube wideband HF choke
43 43 43 43 2 in parallel
4312 020 36642 space 2.5 mm int. dia. 5 mm leads 2 x 7 mm 6 x 3 mm 6 x 35 mm 6 x 9 mm
2 turns enamelled 1.6 mm copper wire 25 nH
L16, L17 L18, L19 L20, L21 R1, R6 R2, R5 R3, R4
stripline (notes 2 and 4) stripline (notes 2 and 4) stripline (notes 2 and 4) 10 turns potentiometer metal film resistor metal film resistor
43 43 43 50 k 0.4 W, 1 k 0.4 W, 536
1998 Jul 29
9
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
COMPONENT R7, R8 R9 IC1 Notes
DESCRIPTION metal film resistor metal film resistor voltage regulator 78L05
VALUE 1 W, 5%, 10 1 W, 3.16 k
DIMENSIONS
CATALOGUE No.
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines L1, L3 - L11, L16 - L22 and L24 are on a double copper-clad printed circuit board with glass microfibre PTFE dielectric (r = 2.2); thickness 116 inch; thickness of copper sheet 2 x 35 m. 3. Semi-rigid cables L2 and L23 are soldered on to striplines L1 and L24. 4. A copper strap, thickness 0.8 mm, is soldered over the complete striplines L16 - L21 to avoid overheating by large RF currents.
1998 Jul 29
10
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
handbook, full pagewidth
119
130
100
R9 +VDD1 C34 L1 L2
IC1
to R1, R6 C31 C32 C33 slider R1 R2 C9
C13 C18 L12 R7 L12 L13 C6
C12
C16 C17 L22 +VDD1
C8 R3 L4 hollow rivets C3 C2 R5 C11 L5 C5
hollow rivet C1 L8 L6 C4 L7 R4 L9 L10 C25 L16 C23 C24 L17 C26 C29 L18 C27 L19 L20 C28 L21 C30 hollow rivets
C22
L11
C10 L14 C7 L15 R8 C19 L15 C14 C15
+VDD2 L24
L3
slider R6
L23 C20 C21 copper strap
copper strap
MGP213
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. Dimensions in mm.
Fig.13 Component layout for 225 MHz class-AB test circuit.
1998 Jul 29
11
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
handbook, halfpage
2
MGP242
MGP243
handbook, halfpage
2
Zi () 1 ri ZL () RL
0
1
-1
xi
XL
-2 150
200
f (MHz)
250
0 150
200
f (MHz)
250
Class-AB operation; VDS = 32 V; IDQ = 2 x 250 mA; RGS = 536 (per section); PL = 300 W.
Class-AB operation; VDS = 32 V; IDQ = 2 x 250 mA; RGS = 536 (per section); PL = 300 W.
Fig.14 Input impedance as a function of frequency (series components); typical values per section.
Fig.15 Load impedance as a function of frequency (series components); typical values per section.
handbook, halfpage
20
MGP244
Gp (dB)
16
12
8
4
0 150
200
f (MHz)
250
Class-AB operation; VDS = 32 V; IDQ = 2 x 250 mA; RGS = 536 (per section); PL = 300 W.
Fig.16 Power gain as a function of frequency; typical values per section.
1998 Jul 29
12
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads
BLF368
SOT262A1
D
A F
U1 q H1 C w2 M C
B
c
1
2
H
U2
p
E1 w1 M A B
E
5
A
3
b e
4
w3 M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 5.77 5.00 0.227 0.197 b 5.85 5.58 c 0.16 0.10 D e E E1 F 1.78 1.52 0.070 0.060 H 20.58 20.06 0.81 0.79 H1 17.02 16.51 0.67 0.65 p 3.28 3.02 0.129 0.119 Q 2.85 2.59 q 27.94 U1 34.17 33.90 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.51 0.02 w2 1.02 0.04 w3 0.25 0.01
21.98 10.27 10.29 11.05 21.71 10.05 10.03 0.865 0.404 0.405 0.435 0.855 0.396 0.395
0.230 0.006 0.220 0.004
0.112 1.100 0.102
OUTLINE VERSION SOT262A1
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
1998 Jul 29
13
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF368
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1998 Jul 29
14
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
NOTES
BLF368
1998 Jul 29
15
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125108/00/03/pp16
Date of release: 1998 Jul 29
Document order number:
9397 750 04188

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